Subthreshold swing
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「Subthreshold swing」文章包含有:「Animprovedsubthresholdswingexpressionaccountingfor...」、「OnDeviceArchitectures」、「Onthemodellingoftemperaturedependence...」、「Sub」、「Subthresholdslope」、「SubthresholdswingcharacteristicsofmultilayerMoS2...」、「亚阈值摆幅」、「亞閾值擺幅」、「第一章緒論」
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An improved subthreshold swing expression accounting for ...
https://www.sciencedirect.com
The subthreshold swing ( S S ) measures the switching efficiency of MOSFET transfer characteristics from weak to strong inversion. The corresponding slope ...
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On Device Architectures
https://research.utwente.nl
In a classical FET the subthreshold swing is limited by dif- fusion of charge carriers and is ≥60 mV/dec at room temper- ature whereas for future CMOS a lower, ...
![On the modelling of temperature dependence ...](https://api.multiavatar.com/On+the+modelling+of+temperature+dependence+....png?apikey=viVnb6N20jclO8)
On the modelling of temperature dependence ...
https://hal.science
Abstract. A comprehensive analysis of the MOSFET subthreshold swing for a 2D subband with exponential band tail of states is first proposed.
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Sub
https://web.iitd.ac.in
Sub-Threshold Swing. • The measure of how sharply the transistor can be turned on/off. • ln 2 = . • We define the sub-threshold slope. = l 10. ...
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Subthreshold slope
https://en.wikipedia.org
A device characterized by steep subthreshold slope exhibits a faster transition between off (low current) and on (high current) states.
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Subthreshold swing characteristics of multilayer MoS2 ...
http://ieeexplore.ieee.org
Subthreshold swing (S) is the figure of merit that determines the behavior of a transistor in the subthreshold region.
![亚阈值摆幅](https://api.multiavatar.com/%E4%BA%9A%E9%98%88%E5%80%BC%E6%91%86%E5%B9%85.png?apikey=viVnb6N20jclO8)
亚阈值摆幅
https://baike.baidu.com
Subthreshold swing 别名 S因子 公式 S = dVg / d(logIds) 单位 mV/dec 性能指标 ... 简介 亚阈值摆幅(Subthreshold swing), 又称为S因子。这是MOSFET在亚阈状态工作 ...
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亞閾值擺幅
https://baike.baidu.hk
亞閾值擺幅(Subthreshold swing), 又稱為S因子。這是MOSFET在亞閾狀態工作時、用作為邏輯開關時的一個重要參數,它定義為:.
![第一章緒論](https://api.multiavatar.com/%E7%AC%AC%E4%B8%80%E7%AB%A0%E7%B7%92%E8%AB%96.png?apikey=viVnb6N20jclO8)
第一章緒論
https://ir.nctu.edu.tw
從表. 3-1 也可看出當金奈米粒子作為浮動閘極後,其臨限電壓值與控制組並不相同,這是因. 為整個元件的工函數發生了變化。 3-2-2 次臨限擺幅(Subthreshold Swing). 次臨限 ...